1 2 ? 15.25 ? 14.0 ? 0.45 lead 10.16 20 nom. 5.5 SMP1000G-JQ prelim. 1/98 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. mechanical data dimensions in mm. p.i.n. photodiode description the SMP1000G-JQ is a large silicon p.i.n. photodiode incorporated in a hermetic metal can package. the package window has greater ultra-violet light transmission, thus extending the useful spectral range of the device. the electrical terminations are via two leads of diameter 0.018" on pitch of 0.2". the cathode of the photodiode is electrically connected to the package. the larger photodiode active area provides greater sensitivity than the smp900 range of devices, with a corresponding reduction in speed. the photodiode structure has been optimised for high sensitivity, light measurement applications across the infra-red to ultra- violet spectrum. inclusion of a suitable optical filter into the package can produce a device that responds only to ultra- violet light. the metal can and optional screening mesh ensure a rugged device with a high degree of immunity to radiated electrical interference. standard to-8 operating temperature range storage temperature range temperature coefficient of responsively temperature coefficient of dark current reverse breakdown voltage -40c to +70c -45c to +80c 0.35% per c x2 per 8c rise 60v absolute maximum ratings (t case = 25c unless otherwise stated) features ? high sensitivity ? excellent linearity ? low noise ? widest spectral response ? enhanced uv sensitivity ? integral optical filter option note 1 ? to8 hermetic metal can package ? emi screening mesh available note 1 contact semelab plc for filter options pin 1 C anode pin 2 C cathode & case
SMP1000G-JQ prelim. 1/98 semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. characteristic t est conditions. min. t yp. max. units responsiv ely activ e area dar k current breakdo wn v oltage capacitance rise time nep l at 900nm e = 0 dar k 1v re v erse e = 0 dar k 10v re v erse e = 0 dar k 10a re v erse e = 0 dar k 0v re v erse e = 0 dar k 20v re v erse 30v re v erse 50 w 900nm 0.45 0.55 76.85 8 9 16 38 60 80 800 735 150 16 28x10 -14 0.45 a/w mm 2 na v pf ns w/ ? hz chara cteristics (t amb =25c unless otherwise stated) d i r e c t i o n a l c h a r a c t e r i s t i c s 0 0 . 1 0 . 2 0 . 3 0 . 4 0 . 5 0 . 6 0 . 7 0 . 8 0 . 9 1 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 a n g l e f r o m s e n s o r t o i l l u m i n a t i o n d i r e c t i o n a l c h a r a c t e r i s t i c s 0 0 . 2 0 . 4 0 . 6 0 . 8 1 0 0 . 2 0 . 4 0 . 6 0 . 8 1 n o r m a l i s e d i n c i d e n t p o w e r 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 a n g l e f r o m s e n s o r t o i l l u m i n a t i o n s p e c t r a l r e s p o n s e 0 2 0 4 0 6 0 8 0 1 0 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0 w a v e l e n g t h ( n m ) relative responsivity (%) normalised incident power
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